FMS 2026 spotlights AI memory bottlenecks as SK hynix, Samsung and Kioxia push different storage paths
At FMS 2026 in Santa Clara, held from Aug. 4 to Aug. 6, storage vendors used the industry’s largest independent storage conference to show how AI system design is pushing memory and storage into a more central role. SK hynix and Sandisk introduced the first standard specification for High Bandwidth Flash, or HBF, through the Open Compute Project, with support for 8-high and 16-high stacks and capacity of up to 512GB per package. The product’s read bandwidth ranges from 0.4 TB/s to 3.0 TB/s, putting the top end into HBM4 territory, though it was presented as an added tier below HBM rather than a replacement for it. Samsung unveiled its V10 BV-NAND with more than 400 layers and said it was the industry’s first use of wafer bonding for that route, while also previewing zHBM and zNAND-O as concepts that have not entered mass production. Kioxia, for its part, introduced the CM10, described as the first enterprise SSD to combine PCIe 6.0, 332-layer BiCS10 and direct cold-plate liquid cooling. The report also said Samsung plans to raise monthly HBM output from about 170,000 wafers to about 250,000 wafers, with the target set for the end of 2026.



